Analysis of Failure Mechanisms Occuring at Breakdown Voltage in power p-GaN HEMT - LAAS-Gestion de l'énergie
Communication Dans Un Congrès Année : 2024

Analysis of Failure Mechanisms Occuring at Breakdown Voltage in power p-GaN HEMT

Résumé

This study focuses on the drain-source breakdown voltage (VBR) of 100 V commercial p-GaN transistors. By presenting VBR values, showcasing device dispersion, and employing failure analysis (FA), we explore various physical degradation mechanisms. Investigating the degradation process from origin to defect manifestation enhances our understanding of GaN transistor limitations. Additionally, the paper highlights the adaptation of FA methodology based on defect nature, providing valuable insights for semiconductor device reliability improvement.
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Dates et versions

hal-04687318 , version 1 (04-09-2024)

Identifiants

  • HAL Id : hal-04687318 , version 1

Citer

Lucien Ghizzo, David Trémouilles, Gérald Guibaud, Christophe de Nardi, Vanessa Chazal, et al.. Analysis of Failure Mechanisms Occuring at Breakdown Voltage in power p-GaN HEMT. 31st edition of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2024), Jul 2024, Singapore (SG), Singapore. ⟨hal-04687318⟩
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